microwave power gaas fet microwave semiconductor TIM5964-8SL-422 technical data features ? low intermodulation distortion ? high gain im3=-45 dbc at po= 28.5dbm, g1db=8.0db(min.) at 5.85ghz to 6.75ghz single carrier level ? broad band internally matched fet ? high power ? hermetically sealed package p1db=39.5dbm at 5.85ghz to 6.75ghz rf performance specifications ( ta= 25 c ) characteristics symbol conditions unit min. typ. max. output power at 1db gain compression point p 1db dbm 38.5 39.5 ? power gain at 1db gain compression point g 1db db 8.0 ? ? drain current i ds1 a ? 2.2 2.6 gain flatness g db ? ? 0.6 power added efficiency add vds=10v f= 5.85 to 6.75ghz % ? 35 ? 3 rd order intermodulation distortion im3 dbc -42 -45 ? drain current ids2 two-tone test po=28.5dbm (single carrier level) a ? 2.2 2.6 channel temperature rise tch (vds x ids + pin ? p1db) x rth(c-c) c ? ? 80 recommended gate resistance(rg) : rg= 150 (max.) electrical characteristics ( ta= 25 c ) characteristics symbol conditions unit min. typ. max. transconductance gm v ds = 3v i ds = 3.0a ms ? 1800 ? pinch-off voltage v gsoff v ds = 3v i ds = 30ma v -1.0 -2.5 -4.0 saturated drain current i dss v ds = 3v v gs = 0v a ? 5.2 ? gate-source breakdown voltage v gso i gs = -100 a v -5 ? ? thermal resistance r th(c-c) channel to case c/w ? 2.5 3.8 ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may results from its use, no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. the information contained herein is subjec t to change without prior notice. it is therefor advisable to contact toshiba before proceeding with design of equipment incorporating this product. rev. jul. 2006
TIM5964-8SL-422 absolute maximum ratings ( ta= 25 c ) characteristics symbol unit rating drain-source voltage v ds v 15 gate-source voltage v gs v -5 drain current i ds a 7.0 total power dissipation (tc= 25 c) p t w 39.5 channel temperature t ch c 175 s torage temperature t stg c -65 to +175 package outline (2-11d1b) unit in mm (1) gate (2) source (3) drain handling precautions for package model soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 c. 2
TIM5964-8SL-422 rf performance 3 ou tput power vs. frequency 37 38 39 40 41 42 5.75 6.00 6.25 6.50 6.75 output power vs. frequency v ds = 10 v i ds ? 2.2 a pin= 30.5 dbm po (dbm) po ( dbm ) frequency (ghz) frequency (ghz) output power vs. input power po add 33 35 37 39 41 24 26 28 30 32 pin (dbm) po (dbm) 10 20 30 40 50 60 70 80 90 100 out p ut power vs. in p ut power f=6.75 ghz v ds = 10 v i ds ? 2.2 a po po(dbm) add(%) add pin(dbm)
TIM5964-8SL-422 power dissipation vs. case temperature 0 5 10 15 20 25 30 35 40 45 50 0 40 80 120 160 200 tc () pt (w) power dissipation vs. case temperature tc ( c ) p t (w) im3 vs. output power characteristics -60 -50 -40 -30 -20 -10 24 26 28 30 32 34 po (dbm), single carrier level im3 (dbc) v ds = 10 v i ds ? 2.2 a f= 6.3ghz f= 5mhz im3 vs. out p ut power characteristics po(dbm), single carrier level im 3 (dbc) 4
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